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IRF40H210 PDF预览

IRF40H210

更新时间: 2024-11-19 01:19:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 570K
描述
Brushed Motor drive applications

IRF40H210 数据手册

 浏览型号IRF40H210的Datasheet PDF文件第2页浏览型号IRF40H210的Datasheet PDF文件第3页浏览型号IRF40H210的Datasheet PDF文件第4页浏览型号IRF40H210的Datasheet PDF文件第5页浏览型号IRF40H210的Datasheet PDF文件第6页浏览型号IRF40H210的Datasheet PDF文件第7页 
StrongIRFET™  
IRF40H210  
HEXFET® Power MOSFET  
Application  
 Brushed Motor drive applications  
 BLDC Motor drive applications  
 Battery powered circuits  
 Half-bridge and full-bridge topologies  
 Synchronous rectifier applications  
 Resonant mode power supplies  
 OR-ing and redundant power switches  
 DC/DC and AC/DC converters  
 DC/AC Inverters  
VDSS  
RDS(on) typ.  
max  
40V  
1.4m  
1.7m  
ID (Silicon Limited)  
ID (Package Limited)  
201A  
100A  
Benefits  
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
 Fully Characterized Capacitance and Avalanche SOA  
 Enhanced body diode dV/dt and dI/dt Capability  
 Lead-Free, RoHS Compliant  
PQFN 5 x 6 mm  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRF40H210  
PQFN 5mm x 6mm  
Tape and Reel  
4000  
IRF40H210  
225  
200  
175  
150  
125  
100  
75  
6
5
4
3
2
1
0
I
= 100A  
D
Limited by package  
T
T
= 125°C  
= 25°C  
J
50  
25  
J
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10 12 14 16 18 20  
T
, Case Temperature (°C)  
C
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
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© 2015 International Rectifier  
Submit Datasheet Feedback  
April 1, 2015  

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