IRF4000

更新时间： 2024-09-25 11:09:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
7页	573K
描述
IEEE 802.3af Compliant PoE Switch in Power Sourcing Equipment

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF4000 数据手册

PD - 97056

IRF4000

HEXFET^®Power MOSFET

Applications

l IEEE 802.3af Compliant PoE Switch

inPowerSourcingEquipment

V_DSS

R_DS(on)max

270m @V_GS= 12V

350m @V_GS= 10V

I_D

100V

2.4A

Features

l Exceeds IEEE 802.3af PoE

requirements

l Ruggedplanartechnologywithlarge

SOA

l Very Low Leakageat 100V (1.5µA max)

l Fully characterized avalanche voltage

andcurrent

l Thermallyenhanced

l Saves space: replaces 4 discrete

MOSFETs

IRF4000 ISOMETRIC

5mm x 10mm Power MLP

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

V_GS

Drain-to-Source Voltage

100

± 30

2.4

1.9

Gate-to-Source Voltage

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 70°C

@T = 25°C

3.5

Maximum Power Dissipation

Linear Derating Factor

0.028

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

8.6

V/ns

°C

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient (PCB Mount)

Typ.

–––

Max.

1.5

Units

R_θJL

R_θJA

°C/W

–––

Notes through ꢀ are on page 7

www.irf.com

10/07/05

12 3 4 5 6 7

中文翻译

下载PDF

与IRF4000相关器件

型号	品牌	获取价格	描述	数据表
IRF4000TR	INFINEON	获取价格	Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 4-Element, N-Channel, Silicon, Me
IRF40B207	INFINEON	获取价格	Brushed Motor drive applications
IRF40B207_15	INFINEON	获取价格	Brushed Motor drive applications
IRF40H210	INFINEON	获取价格	Brushed Motor drive applications
IRF40H210_15	INFINEON	获取价格	Brushed Motor drive applications
IRF40N03	SUNTAC	获取价格	N-CHANNEL Power MOSFET
IRF40R207	INFINEON	获取价格	Power Field-Effect Transistor,
IRF4104	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF4104L	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF4104LPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET