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IRF3808STRRPBF PDF预览

IRF3808STRRPBF

更新时间: 2024-09-25 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 277K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

IRF3808STRRPBF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.1其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):430 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):106 A最大漏极电流 (ID):75 A
最大漏源导通电阻:0.007 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
最大脉冲漏极电流 (IDM):550 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF3808STRRPBF 数据手册

 浏览型号IRF3808STRRPBF的Datasheet PDF文件第2页浏览型号IRF3808STRRPBF的Datasheet PDF文件第3页浏览型号IRF3808STRRPBF的Datasheet PDF文件第4页浏览型号IRF3808STRRPBF的Datasheet PDF文件第5页浏览型号IRF3808STRRPBF的Datasheet PDF文件第6页浏览型号IRF3808STRRPBF的Datasheet PDF文件第7页 
IRF3808SPbF  
IRF3808LPbF  
HEXFET® Power MOSFET  
Typical Applications  
Industrial Motor Drive  
D
VDSS = 75V  
Benefits  
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
RDS(on) = 0.007Ω  
G
ID = 106A  
S
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
Description  
This Advanced Planar Stripe HEXFET ® Power MOSFET  
utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional  
features of this HEXFET power MOSFET are a 175°C  
junction operating temperature, low RθJC, fast switching  
speed and improved repetitive avalanche rating. This  
combination makes the design an extremely efficient and  
reliable choice for use in a wide variety of applications.  
D2Pak  
IRF3808SPbF  
TO-262  
IRF3808LPbF  
Standard Pack  
Form  
Tube  
Base Part Number  
IRF3808LPbF  
Package Type  
Orderable Part Number  
Quantity  
50  
50  
800  
TO-262  
IRF3808LPbF  
IRF3808SPbF  
IRF3808STRLPbF  
IRF3808STRRPbF  
Tube  
D2Pak  
IRF3808SPbF  
Tape and Reel Left  
Tape and Reel Right  
800  
Absolute Maximum Ratings  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
Max.  
106  
75  
550  
200  
1.3  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
A
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
430  
82  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy†  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
See Fig.12a, 12b, 15, 16  
5.5  
mJ  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.75  
Units  
°C/W  
RθJC  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB Mounted, Steady State)‡  
–––  
40  
1
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback  
November 01, 2013  

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