Datasheet > IRF3808SLPBF

IRF3808SLPBF

更新时间： 2024-11-21 01:23:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	264K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRF3808SLPBF 数据手册

IRF3808SPbF

IRF3808LPbF

HEXFET^®Power MOSFET

Typical Applications

Industrial Motor Drive

V_DSS= 75V

Benefits

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

R_DS(on)= 0.007Ω

I_D= 106A

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Description

This Advanced Planar Stripe HEXFET ® Power MOSFET

utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional

features of this HEXFET power MOSFET are a 175°C

junction operating temperature, low RθJC, fast switching

speed and improved repetitive avalanche rating. This

combination makes the design an extremely efficient and

reliable choice for use in a wide variety of applications.

D²Pak

IRF3808SPbF

TO-262

IRF3808LPbF

Standard Pack

Form

Tube

Base Part Number

IRF3808LPbF

Package Type

Orderable Part Number

Quantity

800

TO-262

IRF3808LPbF

IRF3808SPbF

IRF3808STRLPbF

IRF3808STRRPbF

Tube

D²Pak

IRF3808SPbF

Tape and Reel Left

Tape and Reel Right

800

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

106

550

200

1.3

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

430

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

RepetitiveAvalancheEnergy

Peak Diode Recovery dv/dt

Operating Junction and

See Fig.12a, 12b, 15, 16

5.5

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB Mounted, Steady State)

–––

November 01, 2013

12 3 4 5 6 7...12

中文翻译

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