Datasheet > IRF4104STRLPBF

IRF4104STRLPBF

更新时间： 2024-11-18 21:18:39

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	376K
描述
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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IRF4104STRLPBF 数据手册

PD - 95468A

IRF4104PbF

IRF4104SPbF

IRF4104LPbF

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_DSS= 40V

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

R_DS(on)= 5.5mΩ

Description

I_D= 75A

ThisHEXFET^®PowerMOSFETutilizesthelatest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating.Thesefeaturescombine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

D²Pak

IRF4104SPbF IRF4104LPbF

TO-262

TO-220AB

IRF4104PbF

Absolute Maximum Ratings

Parameter

Max.

120

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

(Package limited)

@ T = 25°C

470

140

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.95

± 20

W/°C

E_{AS (Thermally limited)}

120

220

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

–––

Units

°C/W

R_θ

Junction-to-Case

R_θ

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

www.irf.com

07/23/10

12 3 4 5 6 7...12

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