IRF3808

更新时间： 2024-11-04 22:31:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
9页	132K
描述
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)

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IRF3808 数据手册

PD - 94291B

IRF3808

AUTOMOTIVE MOSFET

HEXFET^®Power MOSFET

Typical Applications

●

Integrated Starter Alternator

●

42 Volts Automotive Electrical Systems

V_DSS= 75V

Benefits

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

_DS(on)= 0.007Ω

I_D= 140A

Description

Designed specifically for Automotive applications, this Advanced

Planar Stripe HEXFET ® Power MOSFET utilizes the latest process-

ing techniques to achieve extremely low on-resistance per silicon

area.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°C

junction operating temperature, low RθJC, fast switching speed and

improved repetitive avalanche rating. This combination makes the

design an extremely efficient and reliable choice for use in higher

power Automotive electronic systems and a wide variety of other

applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

140

550

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

330

W/°C

Linear Derating Factor

2.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

430

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

See Fig.12a, 12b, 15, 16

5.5

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.45

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com

02/06/02

12 3 4 5 6 7...9

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