Datasheet > IRF3717PBF-1

IRF3717PBF-1

更新时间： 2024-11-25 21:14:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	252K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IRF3717PBF-1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.67
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IRF3717PBF-1 数据手册

IRF3717PbF-1

HEXFET^®Power MOSFET

V_DS

4.4

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

(@T_A= 25°C)

SO-8

Top View

Applications

l Synchronous MOSFET for Notebook Processor Power

l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

Features

Benefits

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF3717PbF-1

IRF3717TRPbF-1

IRF3717PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

160

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through are on page 10

July 25, 2014

12 3 4 5 6 7...10

中文翻译

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