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IRF3717PBF-1_15 PDF预览

IRF3717PBF-1_15

更新时间: 2024-11-08 01:19:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 258K
描述
Synchronous MOSFET for Notebook Processor Power

IRF3717PBF-1_15 数据手册

 浏览型号IRF3717PBF-1_15的Datasheet PDF文件第2页浏览型号IRF3717PBF-1_15的Datasheet PDF文件第3页浏览型号IRF3717PBF-1_15的Datasheet PDF文件第4页浏览型号IRF3717PBF-1_15的Datasheet PDF文件第5页浏览型号IRF3717PBF-1_15的Datasheet PDF文件第6页浏览型号IRF3717PBF-1_15的Datasheet PDF文件第7页 
IRF3717PbF-1  
HEXFET® Power MOSFET  
A
VDS  
20  
4.4  
22  
V
A
1
2
3
4
8
D
S
S
S
G
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
ID  
m
Ω
7
D
6
nC  
A
D
5
D
20  
(@TA = 25°C)  
SO-8  
Top View  
Applications  
l Synchronous MOSFET for Notebook Processor Power  
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems  
Features  
Benefits  
Industry-standard pinout SO-8 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1, Industrial qualification  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
Tube/Bulk  
Tape and Reel  
95  
4000  
IRF3717PbF-1  
IRF3717TRPbF-1  
IRF3717PbF-1  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
20  
± 20  
20  
V
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
16  
A
160  
2.5  
1.6  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
Notes  through „ are on page 10  
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback  
1
July 25, 2014  

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