Datasheet > IRF3717

IRF3717

更新时间： 2024-11-24 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	249K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF3717 数据手册

PD - 95843

IRF3717

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

V_DSS

R_DS(on)max

I_D

4.4m @V_GS= 10V

Processor Power

20V

20A

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in

Networking Systems

Benefits

l Ultra-Low Gate Impedance

SO-8

l Very Low R_DS(on)

Top View

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

160

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through are on page 10

www.irf.com

2/20/04

12 3 4 5 6 7...10

中文翻译

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IRF3717 替代型号

型号	品牌	替代类型	描述	数据表
IRF3717PBF	INFINEON	功能相似	HEXFET Power MOSFET

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IRF3717PBF	INFINEON	获取价格	HEXFET Power MOSFET
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IRF3717TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 20V, 0.0044ohm, 1-Element, N-Channel, Silicon, Me
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IRF-38.2UH+-10%R36	VISHAY	获取价格	General Purpose Inductor, 8.2uH, 10%, Ferrite-Core,
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