IRF3711ZPBF

更新时间： 2024-11-24 23:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	358K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF3711ZPBF 数据手册

PD - 95530

IRF3711ZPbF

IRF3711ZSPbF

IRF3711ZLPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l Lead-Free

V_DSSR_DS(on)max

6.0m:

20V

16nC

Benefits

l Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRF3711ZS

TO-262

IRF3711ZL

TO-220AB

IRF3711Z

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

380

@ T_C= 25°C

@ T_C= 100°C

@T_C= 25°C

Maximum Power Dissipation

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.53

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case)

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.89

–––

Units

°C/W

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

Notes through are on page 12

www.irf.com

7/20/04

12 3 4 5 6 7...12

中文翻译

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