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IRF3710ZL PDF预览

IRF3710ZL

更新时间: 2024-11-24 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 269K
描述
AUTOMOTIVE MOSFET

IRF3710ZL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:PLASTIC, TO-262, 3 PINReach Compliance Code:compliant
风险等级:5.6Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):59 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):240 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF3710ZL 数据手册

 浏览型号IRF3710ZL的Datasheet PDF文件第2页浏览型号IRF3710ZL的Datasheet PDF文件第3页浏览型号IRF3710ZL的Datasheet PDF文件第4页浏览型号IRF3710ZL的Datasheet PDF文件第5页浏览型号IRF3710ZL的Datasheet PDF文件第6页浏览型号IRF3710ZL的Datasheet PDF文件第7页 
PD - 94632A  
AUTOMOTIVE MOSFET  
IRF3710Z  
IRF3710ZS  
IRF3710ZL  
Features  
HEXFET® Power MOSFET  
O
O
O
O
O
O
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 100V  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 18mΩ  
G
Description  
ID = 59A  
SpecificallydesignedforAutomotiveapplications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional fea-  
turesofthisdesign area175°Cjunctionoperating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features com-  
bine to make this design an extremely efficient  
and reliable device for use in Automotive applica-  
tions and a wide variety of other applications.  
S
D2Pak  
TO-262  
IRF3710ZL  
TO-220AB  
IRF3710Z  
IRF3710ZS  
Absolute Maximum Ratings  
Parameter  
Max.  
59  
Units  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
42  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
Pulsed Drain Current  
240  
160  
DM  
P
@TC = 25°C  
Maximum Power Dissipation  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
1.1  
W/°C  
V
V
± 20  
GS  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
170  
200  
mJ  
E
AS (tested)  
Avalanche Current  
IAR  
EAR  
See Fig.12a,12b,15,16  
A
Repetitive Avalanche Energy  
mJ  
°C  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.92  
–––  
62  
Units  
Rθ  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
°C/W  
JC  
CS  
JA  
JA  
Case-to-Sink, Flat, Greased Surface  
0.50  
–––  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
08/29/03  

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