Datasheet > IRF3711STRRPBF

IRF3711STRRPBF

更新时间： 2024-11-25 20:43:15

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
11页	262K
描述
Power Field-Effect Transistor, 75A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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中文翻译

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数据手册

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IRF3711STRRPBF 数据手册

PD-94062D

IRF3711

IRF3711S

IRF3711L

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High Frequency Isolated DC-DC

V_DSS

20V

R_DS(on)max

I_D

Converters with Synchronous Rectification

for Telecom and Industrial Use

6.0mΩ

110A

l High Frequency Buck Converters for

Server Processor Power Synchronous FET

l Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

Benefits

l Ultra-Low Gate Impedance

D²Pak

IRF3711S

TO-262

IRF3711L

TO-220AB

IRF3711

l Very Low RDS(on) at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

110

440

P_D@T_C= 25°C

P_D@T_A= 25°C

Maximum Power Dissipation

Maximum Power Dissipationꢀ

Linear Derating Factor

120

3.1

0.96

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB mount)ꢀ

Typ.

Max.

1.04

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

°C/W

Notes through are on page 11

www.irf.com

12/9/04

12 3 4 5 6 7...11

中文翻译

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