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IRF3711Z PDF预览

IRF3711Z

更新时间: 2024-11-24 23:16:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 299K
描述
HEXFET Power MOSFET

IRF3711Z 数据手册

 浏览型号IRF3711Z的Datasheet PDF文件第2页浏览型号IRF3711Z的Datasheet PDF文件第3页浏览型号IRF3711Z的Datasheet PDF文件第4页浏览型号IRF3711Z的Datasheet PDF文件第5页浏览型号IRF3711Z的Datasheet PDF文件第6页浏览型号IRF3711Z的Datasheet PDF文件第7页 
PD - 94757A  
IRF3711Z  
IRF3711ZS  
IRF3711ZL  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
VDSS RDS(on) max  
Qg  
6.0m:  
20V  
16nC  
Benefits  
l Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRF3711ZS  
TO-262  
IRF3711ZL  
TO-220AB  
IRF3711Z  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
20  
V
V
Gate-to-Source Voltage  
± 20  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
92  
65  
380  
I
I
I
@ TC = 25°C  
A
D
D
@ TC = 100°C  
DM  
P
P
@TC = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
79  
40  
W
D
D
@TC = 100°C  
Linear Derating Factor  
Operating Junction and  
0.53  
W/°C  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case)  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.89  
–––  
62  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
Notes  through ‡ are on page 12  
www.irf.com  
1
10/30/03  

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