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IRF3711PBF PDF预览

IRF3711PBF

更新时间: 2024-11-25 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 288K
描述
HEXFET Power MOSFET

IRF3711PBF 数据手册

 浏览型号IRF3711PBF的Datasheet PDF文件第2页浏览型号IRF3711PBF的Datasheet PDF文件第3页浏览型号IRF3711PBF的Datasheet PDF文件第4页浏览型号IRF3711PBF的Datasheet PDF文件第5页浏览型号IRF3711PBF的Datasheet PDF文件第6页浏览型号IRF3711PBF的Datasheet PDF文件第7页 
PD-94948  
IRF3711PbF  
IRF3711SPbF  
IRF3711LPbF  
SMPS MOSFET  
Applications  
l HighFrequencyIsolatedDC-DC  
HEXFET® Power MOSFET  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
VDSS  
20V  
RDS(on) max  
ID  
110A  
†
6.0mΩ  
l High Frequency Buck Converters for  
Server Processor Power Synchronous FET  
l Optimized for Synchronous Buck  
Converters Including Capacitive Induced  
Turn-on Immunity  
l Lead-Free  
Benefits  
D2Pak  
TO-262  
l Ultra-LowGateImpedance  
TO-220AB  
IRF3711PbF  
IRF3711SPbF IRF3711LPbF  
l
Very Low RDS(on) at 4.5V VGS  
l FullyCharacterizedAvalancheVoltage  
and Current  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
20  
Units  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
110†  
69  
A
440  
PD @TC = 25°C  
PD @TA = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipationꢀ  
Linear Derating Factor  
120  
W
W
3.1  
0.96  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.04  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
Junction-to-Ambient (PCB mount)ꢀ  
°C/W  
40  
Notes  through † are on page 11  
www.irf.com  
1
2/27/04  

IRF3711PBF 替代型号

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