Datasheet > IRF3710ZL

IRF3710ZL

更新时间： 2024-11-25 12:04:55

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
12页	4631K
描述
Advanced Process Technology Ultra Low On-Resistance

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数据手册

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IRF3710ZL 数据手册

IRF3710Z

IRF3710ZS

www.kersemi.com

IRF3710ZL

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 100V

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)= 18mΩ

Description

I_D= 59A

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

turesofthisdesign area175°Cjunctionoperating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient

and reliable device for use in Automotive applica-

tions and a wide variety of other applications.

D²Pak

TO-262

IRF3710ZL

TO-220AB

IRF3710Z

IRF3710ZS

Absolute Maximum Ratings

Parameter

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

Pulsed Drain Current

240

160

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

1.1

W/°C

± 20

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

170

200

_AS(tested)

Avalanche Current

I_AR

E_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

°C

Operating Junction and

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.92

–––

Units

R_θ

Junction-to-Case

°C/W

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

12 3 4 5 6 7...12

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