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IRF3710SPBF PDF预览

IRF3710SPBF

更新时间： 2024-11-25 04:00:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 276K
描述
HEXFET㈢ Power MOSFET ( VDSS = 100V , RDS(on) = 23mヘ , ID = 57A )

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中文翻译

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IRF3710SPBF 数据手册

 浏览型号IRF3710SPBF的Datasheet PDF文件第2页浏览型号IRF3710SPBF的Datasheet PDF文件第3页浏览型号IRF3710SPBF的Datasheet PDF文件第4页浏览型号IRF3710SPBF的Datasheet PDF文件第5页浏览型号IRF3710SPBF的Datasheet PDF文件第6页浏览型号IRF3710SPBF的Datasheet PDF文件第7页 
PD - 95108  
IRF3710SPbF  
IRF3710LPbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 100V  
RDS(on) = 23mΩ  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = 57A  
S
Description  
Advanced HEXFET® Power MOSFETs from International Rectifier utilize  
advanced processing techniques to achieve extremely low on-resistance per  
silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and reliable device for use in  
a wide variety of applications.  
The D2Pak is a surface mount power package capable of accommodating die  
sizes up to HEX-4. It provides the highest power capability and the lowest  
possible on-resistance in any existing surface mount package. The D2Pak is  
suitable for high current applications because of its low internal connection  
resistance and can dissipate up to 2.0W in a typical surface mount application.  
The through-hole version (IRF3710L) is available for low-profile applications.  
D2Pak  
IRF3710SPbF  
TO-262  
IRF3710LPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V‡  
Continuous Drain Current, VGS @ 10V‡  
Pulsed Drain Current ‡  
57  
40  
A
180  
PD @TC = 25°C  
Power Dissipation  
200  
W
W/°C  
V
Linear Derating Factor  
1.3  
VGS  
IAR  
Gate-to-Source Voltage  
± 20  
Avalanche Current  
28  
20  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ‡  
Operating Junction and  
mJ  
V/ns  
5.8  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.75  
Units  
°C/W  
RθJC  
RθJA  
Junction-to-Ambient (PCB Mounted,steady-state)**  
–––  
40  
www.irf.com  
1
9/16/04  
1234567...11

中文翻译

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IRF3710SPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF3710STRLPBF INFINEON

完全替代

 Advanced Process Technology
IRF3710STRRPBF INFINEON

类似代替

 HEXFET® Power MOSFET
IRF3710S INFINEON

功能相似

 Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

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