Datasheet > IRF3710LTRLPBF

IRF3710LTRLPBF

更新时间： 2024-11-25 14:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	303K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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IRF3710LTRLPBF 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.6	Base Number Matches：	1

IRF3710LTRLPBF 数据手册

IRF3710SPbF

IRF3710LPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 100V

R_DS(on)= 23mΩ

l Fully Avalanche Rated

l Lead-Free

I_D= 57A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable device for use in

a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D²Pak is

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF3710L) is available for low-profile applications.

D²Pak

IRF3710SPbF

TO-262

IRF3710LPbF

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

180

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.8

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB Mounted,steady-state)**

–––

12 3 4 5 6 7...10

中文翻译

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