5秒后页面跳转
IRF3709ZSTRRPBF PDF预览

IRF3709ZSTRRPBF

更新时间: 2024-11-09 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 124K
描述
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

IRF3709ZSTRRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.4雪崩能效等级(Eas):60 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):42 A
最大漏源导通电阻:0.0063 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):350 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF3709ZSTRRPBF 数据手册

 浏览型号IRF3709ZSTRRPBF的Datasheet PDF文件第2页浏览型号IRF3709ZSTRRPBF的Datasheet PDF文件第3页浏览型号IRF3709ZSTRRPBF的Datasheet PDF文件第4页浏览型号IRF3709ZSTRRPBF的Datasheet PDF文件第5页浏览型号IRF3709ZSTRRPBF的Datasheet PDF文件第6页浏览型号IRF3709ZSTRRPBF的Datasheet PDF文件第7页 
PD - 94071  
IRF3709  
IRF3709S  
IRF3709L  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
VDSS  
30V  
RDS(on) max  
ID  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
†
9.0mΩ  
90A  
l High Frequency Buck Converters for  
Server Processor Power Synchronous FET  
l Optimized for Synchronous Buck  
Converters Including Capacitive Induced  
Turn-on Immunity  
Benefits  
l Ultra-Low Gate Impedance  
D2Pak  
IRF3709S  
TO-262  
IRF3709L  
TO-220AB  
IRF3709  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
30  
Units  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
90†  
57  
A
360  
PD @TC = 25°C  
PD @TA = 25°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationꢀ  
Linear Derating Factor  
120  
W
W
3.1  
0.96  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.04  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
°C/W  
Junction-to-Ambient (PCB mount)ꢀ  
40  
Notes  through †are on page 11  
www.irf.com  
1
02/20/01  

IRF3709ZSTRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF3709ZS INFINEON

类似代替

HEXFET Power MOSFET
IRF3709ZSPBF INFINEON

类似代替

HEXFET Power MOSFET

与IRF3709ZSTRRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF3709ZTRRPBF INFINEON

获取价格

暂无描述
IRF3710 INFINEON

获取价格

Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)
IRF3710L INFINEON

获取价格

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
IRF3710LPBF INFINEON

获取价格

HEXFET㈢ Power MOSFET ( VDSS = 100V , RDS(on)
IRF3710LTRLPBF INFINEON

获取价格

Power Field-Effect Transistor
IRF3710LTRRPBF INFINEON

获取价格

Power Field-Effect Transistor
IRF3710PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF3710S INFINEON

获取价格

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
IRF3710SPBF INFINEON

获取价格

HEXFET㈢ Power MOSFET ( VDSS = 100V , RDS(on)
IRF3710STRLPBF INFINEON

获取价格

Advanced Process Technology