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IRF3709ZTRRPBF PDF预览

IRF3709ZTRRPBF

更新时间: 2024-11-25 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 124K
描述
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IRF3709ZTRRPBF 数据手册

 浏览型号IRF3709ZTRRPBF的Datasheet PDF文件第2页浏览型号IRF3709ZTRRPBF的Datasheet PDF文件第3页浏览型号IRF3709ZTRRPBF的Datasheet PDF文件第4页浏览型号IRF3709ZTRRPBF的Datasheet PDF文件第5页浏览型号IRF3709ZTRRPBF的Datasheet PDF文件第6页浏览型号IRF3709ZTRRPBF的Datasheet PDF文件第7页 
PD - 94071  
IRF3709  
IRF3709S  
IRF3709L  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
VDSS  
30V  
RDS(on) max  
ID  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
†
9.0mΩ  
90A  
l High Frequency Buck Converters for  
Server Processor Power Synchronous FET  
l Optimized for Synchronous Buck  
Converters Including Capacitive Induced  
Turn-on Immunity  
Benefits  
l Ultra-Low Gate Impedance  
D2Pak  
IRF3709S  
TO-262  
IRF3709L  
TO-220AB  
IRF3709  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
30  
Units  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
90†  
57  
A
360  
PD @TC = 25°C  
PD @TA = 25°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationꢀ  
Linear Derating Factor  
120  
W
W
3.1  
0.96  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.04  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
°C/W  
Junction-to-Ambient (PCB mount)ꢀ  
40  
Notes  through †are on page 11  
www.irf.com  
1
02/20/01  

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