Datasheet > 晶体管 > 功率场效应晶体管> IRF3709ZLPBF

IRF3709ZLPBF

更新时间： 2024-11-25 03:15:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
12页	374K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF3709ZLPBF 数据手册

PD -95465

IRF3709ZPbF

IRF3709ZSPbF

IRF3709ZLPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l Lead-Free

V_DSSR_DS(on)max

6.3m:

30V

17nC

Benefits

l Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRF3709ZS

TO-262

IRF3709ZL

TO-220AB

IRF3709Z

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

350

@T_C= 25°C

Maximum Power Dissipation

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.53

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case)

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.89

Units

°C/W

R_θJC

R_θJA

–––

Junction-to-Ambient (PCB Mount)

Notes through are on page 12

www.irf.com

6/30/04

12 3 4 5 6 7...12

中文翻译

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与IRF3709ZLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF3709ZLTRL	INFINEON	获取价格	暂无描述
IRF3709ZLTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZLTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3709ZS	INFINEON	获取价格	HEXFET Power MOSFET
IRF3709ZSPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3709ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZSTRLPBF	INFINEON	获取价格	暂无描述
IRF3709ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZTRRPBF	INFINEON	获取价格	暂无描述