Datasheet > 晶体管 > 功率场效应晶体管> IRF3709ZCSPBF

IRF3709ZCSPBF

更新时间： 2024-11-25 04:00:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
11页	358K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF3709ZCSPBF 数据手册

PD - 95529

IRF3709ZCSPbF

IRF3709ZCLPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l Lead-Free

V_DSSR_DS(on)max

6.3m:

30V

17nC

Benefits

l Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

D²Pak

TO-262

IRF3709ZCS

IRF3709ZCL

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

350

@T_C= 25°C

Maximum Power Dissipation

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.53

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.89

Units

°C/W

R_θJC

Junction-to-Case

R_θJA

–––

Junction-to-Ambient (PCB Mount)

Notes through are on page 11

www.irf.com

7/20/04

12 3 4 5 6 7...11

中文翻译

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与IRF3709ZCSPBF相关器件

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IRF3709ZCSTRLP	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZCSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZCSTRRP	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZL	INFINEON	获取价格	HEXFET Power MOSFET
IRF3709ZLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3709ZLTRL	INFINEON	获取价格	暂无描述
IRF3709ZLTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZLTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZPBF	INFINEON	获取价格	HEXFET Power MOSFET