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IRF3708S PDF预览

IRF3708S

更新时间: 2024-11-24 22:31:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 140K
描述
Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A)

IRF3708S 数据手册

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PD - 93938B  
IRF3708  
IRF3708S  
IRF3708L  
SMPS MOSFET  
Applications  
HEXFET® Power MOSFET  
l High Frequency DC-DC Isolated Converters  
with Synchronous Rectification for Telecom  
and Industrial Use  
VDSS  
30V  
RDS(on) max  
ID  
12mΩ  
62A  
l High Frequency Buck Converters for  
Computer Processor Power  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
D2Pak  
IRF3708S  
TO-262  
IRF3708L  
l Fully Characterized Avalanche Voltage  
TO-220AB  
IRF3708  
and Current  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-to-Source Voltage  
±12  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
62  
52  
A
248  
PD @TC = 25°C  
PD @TC = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
87  
61  
W
W
0.58  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.73  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
°C/W  
Junction-to-Ambient (PCB mount)*  
40  
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
Notes  through „are on page 10  
www.irf.com  
1
8/22/00  

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