Datasheet > IRF3708STRL

IRF3708STRL

更新时间： 2024-11-25 19:59:59

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
10页	135K
描述
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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数据手册

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IRF3708STRL 数据手册

PD - 93938B

IRF3708

IRF3708S

IRF3708L

SMPS MOSFET

Applications

HEXFET^®Power MOSFET

l High Frequency DC-DC Isolated Converters

with Synchronous Rectification for Telecom

and Industrial Use

V_DSS

30V

R_DS(on)max

I_D

12mΩ

62A

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

D²Pak

IRF3708S

TO-262

IRF3708L

l Fully Characterized Avalanche Voltage

TO-220AB

IRF3708

and Current

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

±12

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

248

P_D@T_C= 25°C

P_D@T_C= 70°C

Maximum Power Dissipation

Linear Derating Factor

0.58

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.73

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

Junction-to-Ambient (PCB mount)*

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

Notes through are on page 10

www.irf.com

8/22/00

12 3 4 5 6 7...10

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