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IRF3709STRLPBF PDF预览

IRF3709STRLPBF

更新时间: 2024-02-11 16:33:25
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 237K
描述
Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

IRF3709STRLPBF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.09雪崩能效等级(Eas):382 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):360 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF3709STRLPBF 数据手册

 浏览型号IRF3709STRLPBF的Datasheet PDF文件第2页浏览型号IRF3709STRLPBF的Datasheet PDF文件第3页浏览型号IRF3709STRLPBF的Datasheet PDF文件第4页浏览型号IRF3709STRLPBF的Datasheet PDF文件第5页浏览型号IRF3709STRLPBF的Datasheet PDF文件第6页浏览型号IRF3709STRLPBF的Datasheet PDF文件第7页 
PD - 95495  
IRF3709PbF  
IRF3709SPbF  
IRF3709LPBF  
SMPS MOSFET  
Applications  
HEXFET® Power MOSFET  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Server Processor Power Synchronous FET  
l Optimized for Synchronous Buck  
Converters Including Capacitive Induced  
Turn-on Immunity  
VDSS  
30V  
RDS(on) max  
ID  
90A  
†
9.0mΩ  
l Lead-Free  
Benefits  
l Ultra-Low Gate Impedance  
D2Pak  
IRF3709S  
TO-262  
IRF3709L  
TO-220AB  
IRF3709  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
30  
Units  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
90†  
57  
A
360  
PD @TC = 25°C  
PD @TA = 25°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationꢀ  
Linear Derating Factor  
120  
W
W
3.1  
0.96  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.04  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
Junction-to-Ambient (PCB mount)ꢀ  
°C/W  
40  
Notes  through † are on page 11  
www.irf.com  
1
07/01/04  

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