PD - 93938B
IRF3708
IRF3708S
IRF3708L
SMPS MOSFET
Applications
HEXFET® Power MOSFET
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
VDSS
30V
RDS(on) max
ID
12mΩ
62A
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
D2Pak
IRF3708S
TO-262
IRF3708L
l Fully Characterized Avalanche Voltage
TO-220AB
IRF3708
and Current
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
±12
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
62
52
A
248
PD @TC = 25°C
PD @TC = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
87
61
W
W
0.58
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.73
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Junction-to-Ambient (PCB mount)*
40
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
www.irf.com
1
8/22/00