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IRL3103PBF PDF预览

IRL3103PBF

更新时间: 2024-10-01 12:28:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 190K
描述
Advanced Process Technology

IRL3103PBF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.43其他特性:HIGH RELIABILITY, AVALANCHE RATED
雪崩能效等级(Eas):1320 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):56 A最大漏极电流 (ID):64 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):83 W
最大脉冲漏极电流 (IDM):220 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRL3103PBF 数据手册

 浏览型号IRL3103PBF的Datasheet PDF文件第2页浏览型号IRL3103PBF的Datasheet PDF文件第3页浏览型号IRL3103PBF的Datasheet PDF文件第4页浏览型号IRL3103PBF的Datasheet PDF文件第5页浏览型号IRL3103PBF的Datasheet PDF文件第6页浏览型号IRL3103PBF的Datasheet PDF文件第7页 
PD - 94994  
IRL3103PbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 30V  
RDS(on) = 12mΩ  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = 64A  
S
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220 contribute  
to its wide acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
64  
45  
A
220  
PD @TC = 25°C  
Power Dissipation  
94  
0.63  
W
W/°C  
V
Linear Derating Factor  
VGS  
IAR  
Gate-to-Source Voltage  
± 16  
Avalanche Current  
34  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
22  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.6  
–––  
62  
°C/W  
www.irf.com  
1
2/10/04  

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