Datasheet > IRL3103STRRPBF

IRL3103STRRPBF

更新时间： 2024-10-01 21:19:15

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	122K
描述
Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRL3103STRRPBF 数据手册

PD - 94162

IRL3103S

IRL3103L

l Advanced Process Technology

l Surface Mount (IRL3103S)

l Low-profile through-hole (IRL3103L)

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 30V

l Fully Avalanche Rated

R_DS(on)= 12mΩ

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETpowerMOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

I_D= 64A

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pakissuitableforhighcurrentapplicationsbecauseofits

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

D²Pak

IRL3103S

TO-262

IRL3103L

The through-hole version (IRL3103L) is available for low-

profile applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

220

P_D@T_C= 25°C

Power Dissipation

0.63

W/°C

Linear Derating Factor

V_GS

I_AR

Gate-to-Source Voltage

± 16

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.6

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient (PCB mount)**

–––

www.irf.com

02/14/02

12 3 4 5 6 7...10

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IRL3103STRRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRL3103STRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met

与IRL3103STRRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRL3202	INFINEON	获取价格	HEXFET Power MOSFET
IRL3202L	INFINEON	获取价格	Power Field-Effect Transistor, 48A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRL3202PBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRL3202S	INFINEON	获取价格	HEXFET Power MOSFET
IRL3202SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRL3202STRL	INFINEON	获取价格	Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRL3202STRR	INFINEON	获取价格	Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRL3202STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Met
IRL3215	INFINEON	获取价格	HEXFET Power MOSFET
IRL3215PBF	INFINEON	获取价格	HEXFET Power MOSFET

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