Datasheet > IRLB3813

IRLB3813

更新时间： 2024-11-26 11:12:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	251K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRLB3813 数据手册

PD - 97407

IRLB3813PbF

HEXFET^®Power MOSFET

Applications

l Optimized for UPS/Inverter Applications

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Power Tools

V_DSS

30V

R_DS(on)max

Qg (typ.)

57nC

1.95m @V = 10V

Ω

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

TO-220AB

l Lead-Free

Gate

Drain

Source

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

260

@ T_C= 25°C

190

1050

@ T_C= 100°C

230

Maximum Power Dissipation

@T_C= 25°C

120

@T_C= 100°C Maximum Power Dissipation

Linear Derating Factor

1.6

W/°C

-55 to + 175

Operating Junction and

Storage Temperature Range

STG

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case)

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.64

–––

Units

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Notes through are on page 9

www.irf.com

07/03/09

12 3 4 5 6 7...10

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