Datasheet > IRLB3036GPBF

IRLB3036GPBF

更新时间： 2024-11-25 11:10:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	295K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLB3036GPBF 数据手册

PD - 96275

IRLB3036GPbF

HEXFET^®Power MOSFET

Applications

l DC Motor Drive

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

60V

R_DS(on)typ.

1.9mΩ

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

2.4m

Ω

270A

195A

Benefits

l Optimized for Logic Level Drive

l Very Low R_DS(ON)at 4.5V V_GS

l Superior R*Q at 4.5V V_GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-220AB

IRLB3036GPbF

l Halogen-Free

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

270

190

195

1100

380

2.5

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

±16

8.0

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

290

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

–––

Units

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

www.irf.com

10/16/09

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRLB3036GPBF相关器件

型号	品牌	获取价格	描述	数据表
IRLB3036PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLB3813	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRLB3813PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLB4030	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRLB4030PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLB4132	INFINEON	获取价格	Uninterruptible power supply
IRLB8314	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRLB8314PBF	INFINEON	获取价格	Power Field-Effect Transistor,
IRLB8721	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRLB8721PBF	INFINEON	获取价格	HEXFET Power MOSFET