Datasheet > IRL8113STRR

IRL8113STRR

更新时间： 2024-09-26 19:51:19

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
13页	305K
描述
Power Field-Effect Transistor, 42A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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中文翻译

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数据手册

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IRL8113STRR 数据手册

PD - 95821

IRL8113

IRL8113S

IRL8113L

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

V_DSSR_DS(on)max

Qg (Typ.)

6.0m:

30V

23nC

Benefits

l Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRL8113S

TO-262

IRL8113L

TO-220AB

IRL8113

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

105

420

@ T_C= 25°C

@ T_C= 100°C

@T_C= 25°C

Maximum Power Dissipation

110

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.76

W/°C

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case)

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.32

–––

Units

°C/W

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

Notes through are on page 12

www.irf.com

1/6/04

12 3 4 5 6 7...13

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