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IRL8113LPBF PDF预览

IRL8113LPBF

更新时间: 2024-02-13 11:35:36
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 281K
描述
HEXFET Power MOSFET

IRL8113LPBF 数据手册

 浏览型号IRL8113LPBF的Datasheet PDF文件第2页浏览型号IRL8113LPBF的Datasheet PDF文件第3页浏览型号IRL8113LPBF的Datasheet PDF文件第4页浏览型号IRL8113LPBF的Datasheet PDF文件第5页浏览型号IRL8113LPBF的Datasheet PDF文件第6页浏览型号IRL8113LPBF的Datasheet PDF文件第7页 
PD - 95582  
IRL8113PbF  
IRL8113SPbF  
IRL8113LPbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l Lead-Free  
VDSS RDS(on) max  
Qg (Typ.)  
6.0m  
30V  
23nC  
Benefits  
l Low RDS(on) at 4.5V VGS  
l Low Gate Charge  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRL8113S  
TO-262  
IRL8113L  
TO-220AB  
IRL8113  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
30  
V
V
Gate-to-Source Voltage  
± 20  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
105  
74  
420  
I
I
I
@ TC = 25°C  
A
D
D
@ TC = 100°C  
DM  
P
P
@TC = 25°C  
@TC = 100°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
110  
57  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.76  
W/°C  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case)  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.32  
–––  
62  
Units  
Rθ  
°C/W  
JC  
CS  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
Notes  through ‡ are on page 12  
www.irf.com  
1
07/20/04  

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