是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.72 |
配置: | SINGLE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 23 A | 最大漏源导通电阻: | 0.12 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN7450 | INFINEON |
获取价格 |
HEXFET TRANSISTOR | |
IRHN7450PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHN7450SE | INFINEON |
获取价格 |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A) | |
IRHN7450SESCS | INFINEON |
获取价格 |
Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) | |
IRHN7C50SE | INFINEON |
获取价格 |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) | |
IRHN7C50SEPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Me | |
IRHN8054 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN8130 | INFINEON |
获取价格 |
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) | |
IRHN8130PBF | INFINEON |
获取价格 |
暂无描述 | |
IRHN8150 | INFINEON |
获取价格 |
TRANSISTOR N-CHANNEL |