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IRHN8150 PDF预览

IRHN8150

更新时间： 2024-11-03 22:29:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
14页 461K
描述
TRANSISTOR N-CHANNEL

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中文翻译

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IRHN8150 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, CERAMIC, SMD-1, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.15
Is Samacsys：N其他特性：RADIATION HARDENED
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：34 A最大漏极电流 (ID)：34 A
最大漏源导通电阻：0.07 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
最大脉冲漏极电流 (IDM)：136 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHN8150 数据手册

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Index  
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ProvisionaData Sheet No. PD-9.720A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHN7150  
IRHN8150  
N-CHANNEL  
MEGA RAD HARD  
Product Summary  
100 Volt, 0.055Ω, MEGA RAD HARD HEXFET  
Part Number  
IRHN7150  
BVDSS  
100V  
RDS(on)  
0.055Ω  
0.055Ω  
ID  
International Rectifier’s MEGA RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage sta-  
bility and breakdown voltage stability at total radiation  
doses as high as 1 x 106 Rads (Si). Under identical pre-  
and post-radiation test conditions, International Rectifier’s  
34A  
34A  
IRHN8150  
100V  
RAD HARD HEXFETs retain identical electrical specifi- Features:  
cations up to 1 x 105 Rads (Si) total dose.At 1 x 106 Rads  
(Si) total dose, under the same pre-dose conditions, only  
minor shifts in the electrical specifications are observed  
and are so specified in table 1. No compensation in gate  
drive circuitry is required. In addition, these devices are  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal operation  
within a few microseconds. Single Event Effect (SEE)  
testing of International Rectifier RAD HARD HEXFETs  
has demonstrated virtual immunity to SEE failure. Since  
the MEGA RAD HARD process utilizes International  
Rectifier’s patented HEXFET technology, the user can  
expect the highest quality and reliability in the industry.  
■ Radiation Hardened up to 1 x 106 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Surface Mount  
■ Light-weight  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers, au-  
dio amplifiers and high-energy pulse circuits in space and  
weapons environments.  
Absolute Maximum Ratings  
Pre-Radiation  
Parameter  
IRHN7150, IRHN8150  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
34  
D
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
21  
GS  
I
Pulsed Drain Current ➀  
136  
DM  
@ T = 25°C  
P
Max. Power Dissipation  
150  
W
W/K ➄  
V
D
C
Linear Derating Factor  
1.2  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
500  
mJ  
AS  
I
34  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
15  
mJ  
AR  
dv/dt  
5.5  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
Package Mounting Surface Temperature  
STG  
(for 5 sec.)  
300  
Weight  
2.6 (typical)  
To Order  
 
 
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中文翻译

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IRHN8150 替代型号

型号 品牌 替代类型 描述 数据表
JANSH2N7268U INFINEON

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IRHN7150 INFINEON

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JANSF2N7268U INFINEON

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 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

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