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IRHN8250 PDF预览

IRHN8250

更新时间： 2024-11-17 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
14页 534K
描述
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

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中文翻译

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IRHN8250 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, CERAMIC, SMD1, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.15
其他特性：RADIATION HARDENED雪崩能效等级（Eas）：500 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：21 A
最大漏极电流 (ID)：26 A最大漏源导通电阻：0.11 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：100 W最大脉冲漏极电流 (IDM)：104 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHN8250 数据手册

 浏览型号IRHN8250的Datasheet PDF文件第2页浏览型号IRHN8250的Datasheet PDF文件第3页浏览型号IRHN8250的Datasheet PDF文件第4页浏览型号IRHN8250的Datasheet PDF文件第5页浏览型号IRHN8250的Datasheet PDF文件第6页浏览型号IRHN8250的Datasheet PDF文件第7页 
Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet PD 9.679C  
IRHN7250  
IRHN8250  
N-CHANNEL  
MEGA RAD HARD  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
Product Summary  
200 Volt, 0.10Ω, MEGA RAD HARD HEXFET  
International Rectifier’s MEGA RAD HARD technology  
HEXFET power MOSFETs demonstrate excellent  
threshold voltage stability and breakdown voltage sta-  
bility at total radiation doses as high as 1 x 106 Rads  
(Si). Under identical pre- and post-radiation test con-  
ditions, International Rectifier’s RAD HARD HEXFETs  
retain identical electrical specifications up to 1 x 105  
Rads (Si) total dose. At 1 x 106 Rads (Si) total dose,  
under the same pre-dose conditions, only minor shifts  
in the electrical specifications are observed and are so  
specified in table 1. No compensation in gate drive cir-  
cuitry is required. In addition, these devices are capable  
of surviving transient ionization pulses as high as 1 x  
1012 Rads (Si)/Sec, and return to normal operation within  
a few microseconds. Single Event Effect (SEE) testing  
of International Rectifier RAD HARD HEXFETs has dem-  
onstrated virtual immunity to SEE failure. Since the  
MEGA RAD HARD process utilizes International  
Rectifier’s patented HEXFET technology, the user can  
expect the highest quality and reliability in the industry.  
Part Number  
IRHN7250  
IRHN8250  
BVDSS  
200V  
RDS(on)  
0.10Ω  
0.10Ω  
ID  
26A  
26A  
200V  
Features:  
■ Radiation Hardened up to 1 x 106 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Surface Mount  
■ Light-weight  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers, au-  
dio amplifiers and high-energy pulse circuits in space  
and weapons environments.  
Absolute Maximum Ratings  
Pre-Radiation  
Parameter  
IRHN7250, IRHN8250  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
26  
D
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
16  
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
104  
DM  
@ T = 25°C  
P
150  
W
W/K ➄  
V
D
C
Linear Derating Factor  
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
GS  
E
500  
mJ  
AS  
I
26  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
15  
mJ  
AR  
dv/dt  
5.0  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
(for 5 sec.)  
Package Mounting Surface Temperature  
Weight  
300  
2.6 (typical)  
F-347  
To Order  
 
 
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中文翻译

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IRHN8250 替代型号

型号 品牌 替代类型 描述 数据表
IRHN8250PBF INFINEON

功能相似

 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN7250PBF INFINEON

功能相似

 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
IRHN7250 INFINEON

功能相似

 TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

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