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IRHN9150 PDF预览

IRHN9150

更新时间： 2024-09-13 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
4页 88K
描述
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.120ohm, Id=-22A)

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中文翻译

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IRHN9150 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：SMD-1, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
Is Samacsys：N其他特性：RADIATION HARDENED
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：22 A最大漏极电流 (ID)：22 A
最大漏源导通电阻：0.085 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：150 W最大脉冲漏极电流 (IDM)：88 A
认证状态：Not Qualified参考标准：RH - 100K Rad(Si)
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：380 ns最大开启时间（吨）：210 ns
Base Number Matches：1

IRHN9150 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.885  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHN9150  
P-CHANNEL  
RAD HARD  
-100 Volt, 0.120Ω, RAD HARD HEXFET  
Product Summary  
International Rectifier’s P-channel RAD HARD tech-  
nology HEXFETs demonstrate excellent threshold  
voltage stability and breakdown voltage stability at  
total radiation doses as high as 105 Rads (Si). Under  
Part Number  
BVDSS  
RDS(on)  
ID  
IRHN9150  
-100V  
0.120Ω  
-22A  
identical pre- and post-radiation test conditions, In- Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
ternational Rectifier’s P-channelRAD HARD HEXFETs  
retain identical electrical specifications up to 1 x 105  
Rads (Si) total dose. No compensation in gate drive  
circuitry is required. These devices are also capable  
of surviving transient ionization pulses as high as 1 x  
1012 Rads (Si)/Sec, and return to normal operation  
within a few microseconds.Single Event Effect, (SEE),  
■ Identical Pre- and Post-Electrical Test Conditions  
testing of International Rectifier’s P-channel RAD ■ Repetitive Avalanche Rating  
HARD HEXFETs has demonstrated virtual immunity  
to SEE failure. Since the P-channel RAD HARD pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
P-channel RAD HARD HEXFET transistors also fea-  
ture all of the well-established advantages of MOS-  
FETs, such as voltage control, very fast switching, ease  
of paralleling and temperature stability of the electri-  
cal parameters.  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Surface Mount  
■ Lightweight  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
= -12V, T = 25°C Continuous Drain Current  
C
IRHN9150  
-22  
Units  
I
@ V  
D
GS  
A
I
D
@ V  
= -12V, T = 100°C Continuous Drain Current  
-14  
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-88  
DM  
@ T = 25°C  
P
D
150  
W
W/K ➄  
V
C
1.2  
V
±20  
GS  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
500  
-22  
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
15  
mJ  
AR  
dv/dt  
-5.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Package Mount Surface Temperature  
Weight  
STG  
oC  
300 (for 5 seconds)  
2.6 (typical)  
g
To Order  
 
 
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中文翻译

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IRHN9150 替代型号

型号 品牌 替代类型 描述 数据表
JANSF2N7422U INFINEON

完全替代

 RADIATION HARDENED POWER MOSFET SURFACE MOUNT
JANSR2N7422U INFINEON

完全替代

 RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHN93150 INFINEON

完全替代

 RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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