Datasheet > IRHN9150D

IRHN9150D

更新时间： 2024-09-15 21:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	370K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IRHN9150D 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

IRHN9150D 数据手册

PD-90885H

IRHN9150

JANSR2N7422U

100V, P-CHANNEL

REF: MIL-PRF-19500/662

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

RAD Hard™HEXFET ^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

IRHN9150

100 kRads(Si)

300 kRads(Si)

-22A

JANSR2N7422U

JANSF2N7422U

0.080

IRHN93150

SMD - 1

Description

Features

IR HiRel RADHard™ HEXFET^®MOSFET technology provides

high performance power MOSFETs for space applications.

This technology has long history of proven performance and

reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects

(SEE). The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as DC

to DC converters and motor control. These devices retain all of

the well established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of electrical

parameters.

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Proton Tolerant

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

 Ceramic Package

 Light Weight

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-22

-14

-88

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

150

1.2

V_GS

E_AS

Gate-to-Source Voltage

± 20

500

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

-22

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

-23

T_J

Operating Junction and

Storage Temperature Range

Package Mounting Surface Temp.

Weight

-55 to + 150

T_STG

°C

300 ( for 5s)

2.6 (Typical)

For Footnotes, refer to the page 2.

2018-12-11

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHN9150D相关器件

型号	品牌	获取价格	描述	数据表
IRHN9150PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me
IRHN9150SCS	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me
IRHN9150SCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me
IRHN9230	INFINEON	获取价格	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
IRHN9250	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN93130	ETC	获取价格	-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
IRHN93150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHN93150PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me
IRHN93230	ETC	获取价格	-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
IRHN93250	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

与IRHN9150D相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

84
AIC1781A 电池充电控制器深度解析
2024-09-03

78

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHN9150D

IRHN9150D 技术参数

IRHN9150D 数据手册

与IRHN9150D相关器件

与IRHN9150D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHN9150D

IRHN9150D 技术参数

IRHN9150D 数据手册

与IRHN9150D相关器件

与IRHN9150D相关文章

您还可以找

您在本页遇到什么问题？