是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 380 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 55 A |
最大漏源导通电阻: | 0.043 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 220 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNA53260PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 200V, 0.043ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA53Z60 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET | |
IRHNA54064 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA54160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA54260 | INFINEON |
获取价格 |
200V, N-CHANNEL | |
IRHNA54Z60 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET | |
IRHNA57060 | INFINEON |
获取价格 |
200V, N-CHANNEL | |
IRHNA57064 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA57064D | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHNA57064SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me |