是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
雪崩能效等级(Eas): | 222 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 49 A | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 196 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNA5760SE | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 55A I(D) | SMT | |
IRHNA57Z60 | INFINEON |
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RADIATION HARDENED POWER MOSFET | |
IRHNA57Z60D | INFINEON |
获取价格 |
Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) | |
IRHNA57Z60SCS | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA57Z60SCSPBF | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA58064 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA58064PBF | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA58160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA58160PBF | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA58260 | INFINEON |
获取价格 |
200V, N-CHANNEL |