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IRHNA57264SESCS PDF预览

IRHNA57264SESCS

更新时间: 2024-11-06 13:02:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 181K
描述
Power Field-Effect Transistor, 49A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

IRHNA57264SESCS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CHIP CARRIER, R-CBCC-N3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
雪崩能效等级(Eas):222 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (ID):49 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):196 A认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHNA57264SESCS 数据手册

 浏览型号IRHNA57264SESCS的Datasheet PDF文件第2页浏览型号IRHNA57264SESCS的Datasheet PDF文件第3页浏览型号IRHNA57264SESCS的Datasheet PDF文件第4页浏览型号IRHNA57264SESCS的Datasheet PDF文件第5页浏览型号IRHNA57264SESCS的Datasheet PDF文件第6页浏览型号IRHNA57264SESCS的Datasheet PDF文件第7页 
                                                                            
PD-93816D  
IRHNA57264SE  
RADIATION HARDENED  
POWER MOSFET  
JANSR2N7474U2  
250V, N-CHANNEL  
SURFACE MOUNT (SMD-2)  
REF: MIL-PRF-19500/684  
TECHNOLOGY  
5
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHNA57264SE 100K Rads (Si) 0.06Ω  
45A JANSR2N7474U2  
SMD-2  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
45  
GS  
C
A
I @ V  
= 12V, T = 100°C Continuous Drain Current  
28  
180  
D
GS  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
222  
mJ  
A
AS  
I
45  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
250  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
04/25/06  

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