Datasheet > IRHNA57064D

IRHNA57064D

更新时间： 2024-11-10 09:21:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1285K
描述
Power Field-Effect Transistor,

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IRHNA57064D 数据手册

PD-91852J

IRHNA57064

JANSR2N7468U2

60V, N-CHANNEL

REF: MIL-PRF-19500/673

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

IRHNA57064

IRHNA53064

IRHNA55064

IRHNA58064

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7468U2

JANSF2N7468U2

JANSG2N7468U2

JANSH2N7468U2

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

75A*

5.6m

6.5m

SMD-2

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IRHNA57064 is part of the International Rectifier HiRel

family of products. IR HiRel R5 technology provides high

performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 80 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-

DC converters and motor controllers. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

75*

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

75*

300

250

2.0

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

500

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

4.4

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2018-03-09

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHNA57064D相关器件

型号	品牌	获取价格	描述	数据表
IRHNA57064SCS	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me
IRHNA57064SCV	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me
IRHNA57160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
IRHNA57160D	INFINEON	获取价格	Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA57160PBF	INFINEON	获取价格	暂无描述
IRHNA57160SCV	INFINEON	获取价格	暂无描述
IRHNA57163SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
IRHNA57163SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, M
IRHNA57163SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, M
IRHNA57260	INFINEON	获取价格	200V, N-CHANNEL

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