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IRHNA57064D PDF预览

IRHNA57064D

更新时间: 2024-11-07 09:21:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 1285K
描述
Power Field-Effect Transistor,

IRHNA57064D 数据手册

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PD-91852J  
IRHNA57064  
JANSR2N7468U2  
60V, N-CHANNEL  
REF: MIL-PRF-19500/673  
RADIATION HARDENED  
POWER MOSFET  
TECHNOLOGY  
SURFACE MOUNT (SMD-2)  
R
5
Product Summary  
Part Number  
IRHNA57064  
IRHNA53064  
IRHNA55064  
IRHNA58064  
Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7468U2  
JANSF2N7468U2  
JANSG2N7468U2  
JANSH2N7468U2  
100 kRads(Si)  
300 kRads(Si)  
500 kRads(Si)  
1000 kRads(Si)  
75A*  
75A*  
75A*  
75A*  
5.6m  
5.6m  
5.6m  
6.5m  
Description  
Features  
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Package  
IRHNA57064 is part of the International Rectifier HiRel  
family of products. IR HiRel R5 technology provides high  
performance power MOSFETs for space applications.  
These devices have been characterized for both Total  
Dose and Single Event Effect (SEE) with useful  
performance up to LET of 80 (MeV/(mg/cm2). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC-  
DC converters and motor controllers. These devices  
retain all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Light Weight  
Surface Mount  
ESD Rating: Class 3B per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Parameter  
Pre-Irradiation  
Units  
75*  
ID @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID @ VGS = 12V, TC = 100°C Continuous Drain Current  
75*  
300  
250  
2.0  
A
IDM  
Pulsed Drain Current  
W
W/°C  
V
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
± 20  
500  
VGS  
EAS  
IAR  
mJ  
A
75  
25  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
4.4  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2018-03-09  
International Rectifier HiRel Products, Inc.  

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