Datasheet > 晶体管 > 功率场效应晶体管> IRHNA57064SCS

IRHNA57064SCS

更新时间： 2024-11-09 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	181K
描述
Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

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IRHNA57064SCS 数据手册

ꢁ

PD - 91852G

IRHNA57064

JANSR2N7468U2

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

^{REF: MIL}5^{-PRF-19500/673}

SURFACE MOUNT (SMD-2)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNA57064 100K Rads (Si) 0.0056Ω 75*A JANSR2N7468U2

IRHNA53064 300K Rads (Si) 0.0056Ω 75*A JANSF2N7468U2

IRHNA54064 600K Rads (Si) 0.0056Ω 75*A JANSG2N7468U2

IRHNA58064 1000K Rads (Si) 0.0065Ω 75*A JANSH2N7468U2

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

of low R

and low gate charge reduces the power

DS(on)

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

75*

= 12V, T = 100°C Continuous Drain Current

75*

300

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

4.4

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

06/09/04

12 3 4 5 6 7 8

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与IRHNA57064SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNA57064SCV	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me
IRHNA57160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
IRHNA57160D	INFINEON	获取价格	Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA57160PBF	INFINEON	获取价格	暂无描述
IRHNA57160SCV	INFINEON	获取价格	暂无描述
IRHNA57163SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
IRHNA57163SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, M
IRHNA57163SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, M
IRHNA57260	INFINEON	获取价格	200V, N-CHANNEL
IRHNA57260PBF	INFINEON	获取价格	暂无描述

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