Datasheet > IRHNA54064

IRHNA54064

更新时间： 2024-11-17 22:33:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	181K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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IRHNA54064 数据手册

ꢁ

PD - 91852G

IRHNA57064

JANSR2N7468U2

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

^{REF: MIL}5^{-PRF-19500/673}

SURFACE MOUNT (SMD-2)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNA57064 100K Rads (Si) 0.0056Ω 75*A JANSR2N7468U2

IRHNA53064 300K Rads (Si) 0.0056Ω 75*A JANSF2N7468U2

IRHNA54064 600K Rads (Si) 0.0056Ω 75*A JANSG2N7468U2

IRHNA58064 1000K Rads (Si) 0.0065Ω 75*A JANSH2N7468U2

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

of low R

and low gate charge reduces the power

DS(on)

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

75*

= 12V, T = 100°C Continuous Drain Current

75*

300

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

4.4

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

06/09/04

12 3 4 5 6 7 8

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