型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNA58160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA58160PBF | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA58260 | INFINEON |
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200V, N-CHANNEL | |
IRHNA58Z60 | INFINEON |
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RADIATION HARDENED POWER MOSFET | |
IRHNA58Z60PBF | INFINEON |
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暂无描述 | |
IRHNA593064 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA593064SCS | INFINEON |
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Power Field-Effect Transistor, | |
IRHNA593160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA593160D | INFINEON |
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Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(S | |
IRHNA593160SCS | INFINEON |
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Power Field-Effect Transistor, |