Datasheet > IRHNA54160

IRHNA54160

更新时间： 2024-11-17 21:54:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	181K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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IRHNA54160 数据手册

PD - 91860H

IRHNA57160

JANSR2N7469U2

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

REF: MIL-PRF-19500/673

TECHNOLOGY

ꢀꢁ

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNA57160 100K Rads (Si) 0.012Ω

75*A JANSR2N7469U2

IRHNA53160 300K Rads (Si) 0.012Ω 75*A JANSF2N7469U2

IRHNA54160 600K Rads (Si) 0.012Ω 75*A JANSG2N7469U2

IRHNA58160 1000K Rads (Si) 0.013Ω

75*A JANSH2N7469U2

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

75*

= 12V, T = 100°C Continuous Drain Current

300

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

363

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

6.0

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

06/09/04

12 3 4 5 6 7 8

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