Datasheet > IRHNA57163SESCSPBF

IRHNA57163SESCSPBF

更新时间： 2024-11-09 21:10:27

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
8页	147K
描述
Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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PD - 93856A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

IRHNA57163SE

130V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A*

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

75*

I @ V

= 12V, T = 100°C Continuous Drain Current

300

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

300

W/°C

Linear Derating Factor

2.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

280

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by internal wire diameter

For footnotes refer to the last page

www.irf.com

08/08/01

12 3 4 5 6 7 8

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