型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNA57160D | INFINEON |
获取价格 |
Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) | |
IRHNA57160PBF | INFINEON |
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暂无描述 | |
IRHNA57160SCV | INFINEON |
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暂无描述 | |
IRHNA57163SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) | |
IRHNA57163SESCS | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, M | |
IRHNA57163SESCSPBF | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, M | |
IRHNA57260 | INFINEON |
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200V, N-CHANNEL | |
IRHNA57260PBF | INFINEON |
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暂无描述 | |
IRHNA57260SE | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2) | |
IRHNA57260SED | INFINEON |
获取价格 |
Rad hard, 200V, 35A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) |