Datasheet > IRHNA5760SE

IRHNA5760SE

更新时间： 2024-09-15 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	168K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 55A I(D) \| SMT

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IRHNA5760SE 数据手册

PD - 91839D

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

IRHNA57260SE

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNA57260SE 100K Rads (Si) 0.038Ω 55A

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

220

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

300

W/°C

Linear Derating Factor

2.4

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

±20

380

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

V/ns

dv/dt

9.2

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3(Typical)

For footnotes refer to the last page

www.irf.com

12/16/99

12 3 4 5 6 7 8

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