是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SMD-2, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.19 |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 75 A |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.0056 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
最大脉冲漏极电流 (IDM): | 300 A | 认证状态: | Not Qualified |
参考标准: | RH - 100K Rad(Si) | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 119 ns |
最大开启时间(吨): | 160 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNA57064D | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHNA57064SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA57064SCV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA57160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA57160D | INFINEON |
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Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) | |
IRHNA57160PBF | INFINEON |
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暂无描述 | |
IRHNA57160SCV | INFINEON |
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暂无描述 | |
IRHNA57163SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) | |
IRHNA57163SESCS | INFINEON |
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Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, M | |
IRHNA57163SESCSPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 130V, 0.0137ohm, 1-Element, N-Channel, Silicon, M |