型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHN93150 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
IRHN93150PBF | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Me | |
IRHN93230 | ETC |
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-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package | |
IRHN93250 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
IRHN93250PBF | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Met | |
IRHNA3064 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNA3160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
IRHNA3160PBF | INFINEON |
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Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNA3260 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT | |
IRHNA3Z60 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) |