Datasheet > IRHN93130

IRHN93130

更新时间： 2024-11-20 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	129K
描述
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package

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IRHN93130 数据手册

PD - 90886C

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

IRHN9130

100V, P-CHANNEL

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHN9130

100K Rads (Si)

300K Rads (Si)

0.3Ω

-11A

IRHN93130

International Rectifier’s RAD-Hard HEXFET^TMtechnol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

SMD-1

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

LowTotal Gate Charge

ProtonTolerant

SimpleDriveRequirements

EaseofParalleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-11

-7.0

-44

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

190

-11

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-10

-55 to 150

^oC

Storage Temperature Range

STG

Package Mounting Surface Temperature

Weight

300 ( for 5s)

2.6 (typical)

For footnotes refer to the last page

www.irf.com

2/20/03

12 3 4 5 6 7 8

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