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IRHN93130 PDF预览

IRHN93130

更新时间: 2024-11-04 23:58:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 129K
描述
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package

IRHN93130 数据手册

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PD - 90886C  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-1)  
IRHN9130  
100V, P-CHANNEL  
RAD-HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHN9130  
100K Rads (Si)  
300K Rads (Si)  
0.3Ω  
0.3Ω  
-11A  
-11A  
IRHN93130  
International Rectifier’s RAD-Hard HEXFETTM technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rds(on) and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
SMD-1  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
LowTotal Gate Charge  
ProtonTolerant  
SimpleDriveRequirements  
EaseofParalleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-11  
-7.0  
-44  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
190  
mJ  
A
AS  
I
-11  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
-10  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Package Mounting Surface Temperature  
Weight  
300 ( for 5s)  
2.6 (typical)  
For footnotes refer to the last page  
www.irf.com  
1
2/20/03  

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