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IRHN93250PBF PDF预览

IRHN93250PBF

更新时间： 2024-11-05 21:14:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
8页 127K
描述
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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IRHN93250PBF 数据手册

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PD - 91300D  
IRHN9250  
JANSR2N7423U  
200V, P-CHANNEL  
REF: MIL-PRF-19500/662  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-1)  
RAD Hard™ HEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7423U  
JANSF2N7423U  
IRHN9250  
100K Rads (Si)  
0.315Ω  
0.315Ω  
-14A  
-14A  
IRHN93250 300K Rads (Si)  
SMD-1  
International Rectifier’s RADHard HEXFETTM technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
LowTotal Gate Charge  
ProtonTolerant  
SimpleDriveRequirements  
EaseofParalleling  
Hermetically Sealed  
Surface Mount  
CeramicPackage  
LightWeight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-14  
-9.0  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
-56  
DM  
@ T = 25°C  
P
D
150  
W
W/°C  
V
C
1.2  
V
GS  
Gate-to-SourceVoltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
-14  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
AR  
dv/dt  
-41  
V/ns  
T
-55 to 150  
J
oC  
g
T
STG  
StorageTemperature Range  
PCKG Mounting Surface Temp.  
Weight  
300 ( for 5s)  
2.6 (typical)  
For footnotes refer to the last page  
www.irf.com  
1
06/06/03  
12345678

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