ꢁ
PD - 91852G
IRHNA57064
JANSR2N7468U2
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
REF: MIL5-PRF-19500/673
SURFACE MOUNT (SMD-2)
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHNA57064 100K Rads (Si) 0.0056Ω 75*A JANSR2N7468U2
IRHNA53064 300K Rads (Si) 0.0056Ω 75*A JANSF2N7468U2
IRHNA54064 600K Rads (Si) 0.0056Ω 75*A JANSG2N7468U2
IRHNA58064 1000K Rads (Si) 0.0065Ω 75*A JANSH2N7468U2
SMD-2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
of low R
and low gate charge reduces the power
DS(on)
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
75*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
75*
300
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
Linear Derating Factor
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
500
mJ
A
AS
I
75
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
4.4
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/09/04