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IRHNA53064 PDF预览

IRHNA53064

更新时间: 2024-09-14 22:33:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 181K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

IRHNA53064 数据手册

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PD - 91852G  
IRHNA57064  
JANSR2N7468U2  
60V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
REF: MIL5-PRF-19500/673  
SURFACE MOUNT (SMD-2)  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHNA57064 100K Rads (Si) 0.005675*A JANSR2N7468U2  
IRHNA53064 300K Rads (Si) 0.005675*A JANSF2N7468U2  
IRHNA54064 600K Rads (Si) 0.005675*A JANSG2N7468U2  
IRHNA58064 1000K Rads (Si) 0.006575*A JANSH2N7468U2  
SMD-2  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
of low R  
and low gate charge reduces the power  
DS(on)  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
75*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
75*  
300  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
Linear Derating Factor  
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
75  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
4.4  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
06/09/04  

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